- pb free and rohs compliant - green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code - vz tolerance selection of 2% - matte tin(sn) lead finish with nickel(ni) underplate sod-323f - case: flat lead sod-323f small outline plastic package - terminal: matte tin plated, lead free, solderable per mil-std-202, method 208 guaranteed - polarity: indicated by cathode band - weight : 4.02 0.5mg v f v p d mw r ja o c/w t j , t stg o c zener i vs. v characteristics v br i zk : test current for voltage v br z zk : dynamic impedance at i zk i zt : test current for voltage v z v z z zt : dynamic impedance at i zt i zm : maximum steady state current v zm document number: ds_s1404022 : voltage at i zk : voltage at current i z t forward voltage @ i f = 10ma symbol maximum ratings and electrical characteristics (t a =25 unless otherwise noted) - wide zener voltage range selection : 2.4v to 75v 625 param eter - moisture sensitivity level 1 unit notes: valid provided that electrodes are kept at ambient temperature. mechanical data - high temperature soldering guaranteed: 260c/10s thermal resistance from junction to ambient (note 1) junction and storage temperature range 1 200 -65 to +150 power dissipation - surface mount device type 200mw, 2% tolerance smd zener diode taiwan semiconductor small signal product version: c14 value : voltage at i zm bzt52b2v4s - BZT52B75S features
v f forward voltage = 1v maximum @ i f = 10 ma for all part numbers min nom max bzt52b2v4s 0z 2.35 2.40 2.45 5 100 1 564 45 1 bzt52b2v7s 1z 2.65 2.70 2.75 5 100 1 564 18 1 bzt52b3v0s 2z 2.94 3.00 3.06 5 100 1 564 9 1 bzt52b3v3s 3z 3.23 3.30 3.37 5 95 1 564 4.5 1 bzt52b3v6s 4z 3.53 3.60 3.67 5 90 1 564 4.5 1 bzt52b3v9s 5z 3.82 3.90 3.98 5 90 1 564 2.7 1 bzt52b4v3s 6z 4.21 4.30 4.39 5 90 1 564 2.7 1 bzt52b4v7s 7z 4.61 4.70 4.79 5 80 1 470 2.7 2.0 bzt52b5v1s 8z 5.00 5.10 5.20 5 60 1 451 1.8 2.0 bzt52b5v6s 9z 5.49 5.60 5.71 5 40 1 376 0.9 2.0 bzt52b6v2s az 6.08 6.20 6.32 5 10 1 141 2.7 4.0 bzt52b6v8s bz 6.66 6.80 6.94 5 15 1 75 1.8 4.0 bzt52b7v5s cz 7.35 7.50 7.65 5 15 1 75 0.9 5.0 bzt52b8v2s dz 8.04 8.20 8.36 5 15 1 75 0.63 5.0 bzt52b9v1s ez 8.92 9.10 9.28 5 15 1 94 0.45 6.0 bzt52b10s fz 9.80 10.00 10.20 5 20 1 141 0.18 7.0 bzt52b11s gz 10.78 11.00 11.22 5 20 1 141 0.09 8.0 bzt52b12s hz 11.76 12.00 12.24 5 25 1 141 0.09 8.0 bzt52b13s jz 12.74 13.00 13.26 5 30 1 160 0.09 8.0 bzt52b15s kz 14.70 15.00 15.30 5 30 1 188 0.045 10.5 bzt52b16s lz 15.68 16.00 16.32 5 40 1 188 0.045 11.2 bzt52b18s mz 17.64 18.00 18.36 5 45 1 212 0.045 12.6 bzt52b20s nz 19.60 20.00 20.40 5 55 1 212 0.045 14.0 bzt52b22s pz 21.56 22.00 22.44 5 55 1 235 0.045 15.4 bzt52b24s rz 23.52 24.00 24.48 5 70 1 235 0.045 16.8 bzt52b27s sz 26.46 27.00 27.54 2 80 0.5 282 0.045 18.9 bzt52b30s tz 29.40 30.00 30.60 2 80 0.5 282 0.045 21.0 bzt52b33s uz 32.34 33.00 33.66 2 80 0.5 306 0.045 23.0 bzt52b36s vz 35.28 36.00 36.72 2 90 0.5 329 0.045 25.2 bzt52b39s wz 38.22 39.00 39.78 2 130 0.5 329 0.045 27.3 bzt52b43s xz 42.14 43.00 43.86 2 150 0.5 353 0.045 30.1 bzt52b47s yz 46.06 47.00 47.94 2 170 0.5 353 0.045 33.0 bzt52b51s z 49.98 51.00 52.02 2 180 0.5 376 0.045 35.7 bzt52b56s z 54.88 56.00 57.12 2 200 0.5 400 0.045 39.2 bzt52b62s z 60.76 62.00 63.24 2 215 0.5 423 0.045 43.4 bzt52b68s z 66.64 68.00 69.36 2 240 0.5 447 0.045 47.6 BZT52B75S z 73.50 75.00 76.50 2 255 0.5 470 0.045 52.5 notes: 1. the zener voltage (v z ) is tested under pulse condition of 10ms. 2. the device numbers listed have a standard tolerance on the nomial zener voltage of 2%. 3. for detailed information on price, av ailability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest taiwan semiconductor representative. 4. the zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current(i zt or i zk ) is superimposed to i zt or i zk . document number: ds_s1404022 bzt52b2v4s - BZT52B75S taiwan semiconductor electrical characteristics (ratings at ta=25 o c ambient temperature unl ess otherwise specified) version: c14 z zt @ i zt ( ) max i zk (ma) z zk @ i zk ( ) max i r @ v r (ua) max small signal product v z @ i zt (volt) part number device marking i zt (ma) v r (v)
(ta=25 unless otherwise noted) document number: ds_s1404022 version: c14 small signal product bzt52b2v4s - BZT52B75S taiwan semiconductor ratings and characteristics curves 0.01 0.1 1 10 100 0123456789101112 zener current (ma) zener voltage (v) fig. 2 zener breakdown characteristics t a =25 o c 0.01 0.1 1 10 100 15 25 35 45 55 65 75 85 zener current (ma) zener voltage (v) fig. 3 zener breakdown characteristics 1 10 100 1000 110100 capacitance (pf) zener voltage (v) fig. 5 typical capacitance 0 100 200 300 400 500 600 700 0 50 100 150 200 power dissipation (mw) ambient temperature ( o c) fig. 4 admissible power dissipation curve 1 10 100 1000 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 forward current (ma) forward voltage (v) fig. 1 typical forward characteristics t a =25 o c 1 10 100 1000 110100 dynamic impedence(ohm) zener voltage (v) fig. 6 effect of zener voltage on impedence i z =5ma i z =120ma bias at 50% of v z (nom) 1v bias i z =1ma
part no. bzt52bxxxs (note2) part no. bzt52b2v4s bzt52b2v4s document number: ds_s1404022 version: c14 green compound taiwan semiconductor small signal product package bzt52b2v4s rrg green compound code manufacture code (note1) packing code description note1: manufacture special control, if empty means no special control requirement. rr g sod-323f 3k / 7" reel note2: "xxx" is device code from "2v4" thru "75", detail could follow the previous page bzt52b2v4s-l0 rrg rr g rr g bzt52b2v4s - BZT52B75S green compound manufacture code l0 ordering information packing code green compound code example preferred p/n packing
dimensions sod-323f min max min max a 1.15 1.35 0.045 0.053 b 2.30 2.80 0.091 0.110 c 0.25 0.40 0.010 0.016 d 1.60 1.80 0.063 0.071 e 0.80 1.10 0.031 0.043 f 0.05 0.25 0.002 0.010 suggested pad layout g x x1 y document number: ds_s1404022 0.403 0.016 unit(inch) typ. typ. 1.280 0.050 2.700 0.106 0.710 0.028 unit (inch) dim. unit(mm) small signal product version: c14 bzt52b2v4s - BZT52B75S dim. taiwan semiconductor unit (mm)
notice document number: ds_s1404022 bzt52b2v4s - BZT52B75S taiwan semiconductor small signal product version: c14 specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no r esponsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellec tual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or w arranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from s uch improper use or sale.
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